What is the difference between common emitter and common collector

The transistor emitter is the output terminal for a CC circuit and the input terminal for a CB circuit. Although the Z e equations for the two circuits look different, they can be shown to give exactly the same result in similar situations.

As shown in Fig. A CB circuit normally has its base bypassed as shown, so that the impedance at the emitter is,. For all circuit arrangements, the impedance at the transistor emitter terminal is,. The output for CE and CB circuits is produced at the transistor collector terminal. This is normally a very large quantity at low and medium signal frequencies.

As illustrated in Fig. It is referred as bipolar transistor. There are three basic configurations of transistors viz. Following are the important characteristics of these different modes or configurations. Based on these they are used for different applications. Figure-1 depicts all the three transistor configurations used in various applications of electronic circuit. Good agreement is obtained between measured and predicted data, which verifies the proposed approach for the noise parameters.

In Figures 8 and 9 , the calculated noise parameters in the low frequency ranges Equations 21 to 28 are compared with the predicted data versus frequency for the intrinsic InP HBT device under the same bias condition.

Good agreement is obtained between measured and predicted data in the CB and CC configurations, which verifies the proposed approach for the noise parameters. In this article, a set of new analytical expressions for the relationship between common emitter, common base and common collector microwave HBTs is proposed. The validity of the new approach is proved by comparison with measured S- and noise-parameters up to 20 GHz.

Kobayashi and A. Wang, K. Chang, L. Tran, J. Cowles, T. Block, E. Lin, G. Dow, A. Oki, D. Streit and B. Paidi, Z. Griffith, Y. Wei, M. Dahlstrom, M. Urteage, N. Parthasarathy, S. Munkyo, L.